amplifier transistors maximum ratings rating symbol value unit collectoremitter voltage mps6601/6651 mps6602/6652 v ceo 25 40 vdc collectorbase voltage mps6601/6651 mps6602/6652 v cbo 25 30 vdc emitterbase voltage v ebo 4.0 vdc collector current e continuous i c 1000 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja (1) 200 c/w thermal resistance, junction to case r jc 83.3 c/w 1. r ja is measured with the device soldered into a typical printed circuit board. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 2 1 publication order number: mps6601/d npn mps6601 mps6602 pnp mps6651 mps6652 *on semiconductor preferred device * case 2911, style 1 to92 (to226aa) 1 2 3 * voltage and current are negative for pnp transistors collector 3 2 base 1 emitter collector 3 2 base 1 emitter npn pnp
npn mps6601 mps6602 pnp mps6651 mps6652 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 1.0 madc, i b = 0) mps6601/6651 mps6602/6652 v (br)ceo 25 40 e e vdc collectorbase breakdown voltage (i c = 100 m adc, i e = 0) mps6601/6651 mps6602/6652 v (br)cbo 25 40 e e vdc emitterbase breakdown voltage (i e = 10 m adc, i c = 0) v (br)ebo 4.0 e vdc collector cutoff current (v ce = 25 vdc, i b = 0) mps6601/6651 (v ce = 30 vdc, i b = 0) mps6602/6652 i ces e e 0.1 0.1 m adc collector cutoff current (v cb = 25 vdc, i e = 0) mps6601/6651 (v cb = 30 vdc, i e = 0) mps6602/6652 i cbo e e 0.1 0.1 m adc on characteristics dc current gain (i c = 100 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 1.0 vdc) (i c = 1000 madc, v ce = 1.0 vdc) h fe 50 50 30 e e e e collectoremitter saturation voltage (i c = 1000 madc, i b = 100 madc) v ce(sat) e 0.6 vdc baseemitter on voltage (i c = 500 madc, v ce = 1.0 vdc) v be(on) e 1.2 vdc smallsignal characteristics currentgain e bandwidth product (i c = 50 madc, v ce = 10 vdc, f = 100 mhz) f t 100 e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo e 30 pf switching characteristics delay time t d e 25 ns rise time (v cc = 40 vdc, i c = 500 madc, i b1 = 50 madc t r e 30 ns storage time i b1 = 50 madc, t p 300 ns duty cycle) t s e 250 ns fall time t 300 ns duty cycle) t f e 50 ns
npn mps6601 mps6602 pnp mps6651 mps6652 http://onsemi.com 3 figure 1. thermal response t, time (seconds) 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.03 0.02 0.1 0.07 0.05 0.01 0.3 0.2 1.0 0.7 0.5 r(t), normalized effective transient thermal resistance r q jc (t) = (t) q jc r q jc = 100 c/w max r q ja (t)d = r(t) q ja r q ja = 357 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) t 1 t 2 duty cycle, d = t 1 /t 2 p (pk) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse single pulse figure 2. switching time test circuits output turn-on time -1.0 v v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn-off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 5.0 s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities
npn mps6601 mps6602 pnp mps6651 mps6652 http://onsemi.com 4 figure 3. mps6601/6602 dc current gain figure 4. mps6651/6652 dc current gain figure 5. current gain bandwidth product figure 6. current gain bandwidth product figure 7. on voltages figure 8. on voltages 100 1000 10 i c , collector current (ma) 300 200 100 70 50 30 i c , collector current (ma) -100 -1000 -10 200 100 70 50 20 100 1000 10 i c , collector current (ma) 300 200 100 70 50 30 i c , collector current (ma) -100 -1000 -10 300 200 100 70 50 30 -200 200 10 1000 1.0 i c , collector current (ma) 1.0 0.8 0.6 0.4 0.2 0 i c , collector current (ma) -10 -1000 -1.0 -1.0 -0.8 -0.6 -0.4 -0.2 0 -100 100 t j = 25 c t j = 25 c v ce = 1.0 v t j = 25 c v ce = -1.0 v t j = 25 c v ce = 10 v t j = 25 c f = 30 mhz v ce = -10 v t j = 25 c f = 30 mhz f t , current gain bandwidth product (mhz) v, voltage (volts) v, voltage (volts) npn pnp v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -1.0 v f t , current gain bandwidth product (mhz) fe h , current gain h , current gain fe
npn mps6601 mps6602 pnp mps6651 mps6652 http://onsemi.com 5 figure 9. capacitance figure 10. capacitance figure 11. mps6601/6602 noise figure figure 12. mps6651/6652 noise figure figure 13. mps6601/6602 switching times figure 14. mps6651/6652 switching times 10 25 c ob v r , reverse voltage (volts) 80 60 40 20 0 v r , reverse voltage (volts) 160 120 80 40 0 100 10 k 10 r s , source resistance (ohms) 10 8.0 6.0 4.0 2.0 0 r s , source resistance (ohms) 1 k 10 10 8.0 6.0 4.0 2.0 0 10 k 1 k 20 1000 10 i c , collector current (ma) 200 100 50 20 10 i c , collector current (ma) -20 -1000 -10 500 200 100 50 20 10 -100 100 t j = 25 c v ce = -5.0 v f = 1.0 khz t a = 25 c c, capacitance (pf) nf, noise figure (db) nf, noise figure (db) t, time (ns) t, time (ns) npn pnp 5.0 15 20 2.0 5.0 c ib 1.0 3.0 4.0 -10 -25 c ob -5.0 -15 -20 c ib -2.0 -5.0 -1.0 -3.0 -4.0 t j = 25 c c, capacitance (pf) i c = 100 a 100 v ce = 5.0 v f = 1.0 khz t a = 25 c i c = 100 a 50 200 500 1 k 500 3 k 10 k 5 k t d @ v be(off) = 0.5 v v cc = 40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r t d t d @ v be(off) = -0.5 v v cc = -40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r t d -50 -200 -500 1 k 3 k 5 k 10 k c ib c ob c ib c ob
npn mps6601 mps6602 pnp mps6651 mps6652 http://onsemi.com 6 figure 15. baseemitter temperature coefficient figure 16. baseemitter temperature coefficient figure 17. safe operating area figure 18. safe operating area figure 19. mps6601/6602 saturation region figure 20. mps6651/6652 saturation region 100 1000 1.0 i c , collector current (ma) -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 i c , collector current (ma) -100 -1000 -1.0 -1.2 -1.6 -2.0 -2.4 -2.8 10 1.0 v ce , collector-emitter voltage 500 200 100 50 20 10 v ce , collector-emitter voltage -10 -40 -1.0 -500 -200 -100 -50 -20 -10 -20 20 0.1 10 0.01 i b , base current (ma) 1.0 0.8 0.6 0.4 0.2 0 i b , base current (ma) -0.1 -100 -0.01 -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 1.0 t j = 25 c r vb , temperature coefficient (mv/ c) i c , collector current (ma) npn pnp 10 r vb for v be r vb , temperature coefficient (mv/ c) -10 -0.8 r vb for v be -2.0 -5.0 -1 k 2.0 5.0 40 1 k i c , collector current (ma) -10 100 i c = 100 ma i c = 50 ma i c = 250 ma i c = 500 ma i c = 1000 ma i c = 10 ma t j = 25 c i c = -100 ma i c = -50 ma i c = -250 ma i c = -500 ma i c = -1000 ma i c = -10 ma 1.0 ms 1.0 s t c = 25 c mps6601 current limit thermal limit second breakdown limit mps6602 1.0 ms 1.0 s t c = 25 c mps6651 current limit thermal limit second breakdown limit mps6652 , collector voltage (volts) v ce , collector voltage (volts) v ce
npn mps6601 mps6602 pnp mps6651 mps6652 http://onsemi.com 7 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector case 02911 (to226aa) issue ad
npn mps6601 mps6602 pnp mps6651 mps6652 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mps6601/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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